Researchers from the CEMES-CNRS and the University of Crete (Greece) propose a new bottom-up method for the stress transfer to carbon nanotubes over large surfaces allowing to manipulate in an appropriate way their band structure and consequently to develop modern and efficient HF semiconductor devices. The method is potentially compatible with high end technological application.
 A bottom-up approach for controlled deformation of carbon nanotubes through blistering of supporting substrate surface,
V. S. Prudkovskiy, F. Iacovella, K. P. Katin, M. M. Maslov, and N. Cherkashin,
Nanotechnology 29 (36), 365304 (2018).
 “Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon”
N. Cherkashin, N. Daghbouj, G. Seine, A. Claverie,
J. of Appl. Phys. 123 (16), 161556 (2018).
 “Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon”,
N. Daghbouj, N. Cherkashin, F.-X. Darras, V. Paillard, M. Fnaiech, A. Claverie,
J. of Appl. Phys. 119 (13), 135308 (2016).
 “Cracks and blisters formed close to a silicon wafer surface by He-H co-implantation at low energy”,
N. Cherkashin, N. Daghbouj, F.-X. Darras, M. Fnaiech, A. Claverie,
J. of Appl. Phys. 118, 245301 (2015).
Dr. Nikolay Cherkashin, CEMES (CNRS)
nikolay.cherkashin at cemes.fr